![The diamond form of carbon is an insulator with Eg = 5.5 eV, while silicon is an intrinsic semiconductor with Eg = 1.1 eV. a. Draw band diagrams for diamond and silicon. The diamond form of carbon is an insulator with Eg = 5.5 eV, while silicon is an intrinsic semiconductor with Eg = 1.1 eV. a. Draw band diagrams for diamond and silicon.](https://homework.study.com/cimages/multimages/16/untitled4690442953529588186.png)
The diamond form of carbon is an insulator with Eg = 5.5 eV, while silicon is an intrinsic semiconductor with Eg = 1.1 eV. a. Draw band diagrams for diamond and silicon.
Band gaps and dielectric functions of cubic and hexagonal diamond polytypes calculated by manyв•'body perturbation theory
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Empirical tight-binding sp3s* band structure of GaAs, GaP, AlAs, InAs, C ( diamond) and Si — nextnano Documentation
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C | Free Full-Text | The Combined Influence of Dopant Species and Surface Termination on the Electronic Properties of Diamond Surfaces
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![The electronic properties and band-gap discontinuities at the cubic boron nitride/diamond hetero-interface - RSC Advances (RSC Publishing) DOI:10.1039/C9RA00784A The electronic properties and band-gap discontinuities at the cubic boron nitride/diamond hetero-interface - RSC Advances (RSC Publishing) DOI:10.1039/C9RA00784A](https://pubs.rsc.org/image/article/2019/RA/c9ra00784a/c9ra00784a-f6_hi-res.gif)
The electronic properties and band-gap discontinuities at the cubic boron nitride/diamond hetero-interface - RSC Advances (RSC Publishing) DOI:10.1039/C9RA00784A
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