Temperature dependent electronic band structure of wurtzite GaAs nanowires - Nanoscale (RSC Publishing)
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Temperature Dependence of the Band-Gap Energy and Sub-Band-Gap Absorption Tails in Strongly Quantized ZnSe Nanocrystals Deposited as Thin Films | The Journal of Physical Chemistry C
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Properties for Thermally Conductive Interfaces with Wide Band Gap Materials | ACS Applied Materials & Interfaces
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in a intrinsic semiconductor,band gap is1.2ev then ratio of number of charge carriers at 600 k and 300
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